Lo scenario
Design of a SiC MOSFET full-bridge inverter stage for an 85 kHz inductive power transfer sender, including gate drive references and series resonant tank.
Cosa contiene questo disegno
Leggi le decisioni che ne stanno alla base.
01
Use four n-channel SiC MOSFETs in H-bridge topology with DC bus capacitor
02
Series LC resonant tank tuned near 85 kHz (35uH + 100nF)
03
Gate drive sources referenced to each MOSFET source for high-side bootstrap and low-side ground return
Reuse for WPT transmitter power stage schematics, resonant inverter designs, or high-frequency H-bridge circuits.