シナリオ
Design of a SiC MOSFET full-bridge inverter stage for an 85 kHz inductive power transfer sender, including gate drive references and series resonant tank.
この図に含まれるもの
図の背後にある意思決定を読み解く。
01
Use four n-channel SiC MOSFETs in H-bridge topology with DC bus capacitor
02
Series LC resonant tank tuned near 85 kHz (35uH + 100nF)
03
Gate drive sources referenced to each MOSFET source for high-side bootstrap and low-side ground return
Reuse for WPT transmitter power stage schematics, resonant inverter designs, or high-frequency H-bridge circuits.